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New progress and development trend forecast of magnetron sputtering coating technology

New progress and development trend forecast of magnetron sputtering coating technology

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  • Time of issue:2020-03-05 13:40
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(Summary description)The basic process of glow plasma sputtering is that the target material of the negative electrode is sputtered from the target material under the action of the energetic ions in the glow plasma located on it, and then condenses on the substrate to form a thin film; During this process, the target surface emits secondary electrons at the same time, and these electrons play a key role in keeping the plasma stable. The emergence and application of sputtering technology has gone through many stages. At first, it was just a simple two-pole and three-pole discharge sputtering deposition; after more than 30 years of development, magnetron sputtering technology has developed into the preparation of super hard, wear-resistant, low-temperature An irreplaceable method for functional films such as friction coefficient, corrosion resistance, decoration, and optics and electricity.

New progress and development trend forecast of magnetron sputtering coating technology

(Summary description)The basic process of glow plasma sputtering is that the target material of the negative electrode is sputtered from the target material under the action of the energetic ions in the glow plasma located on it, and then condenses on the substrate to form a thin film; During this process, the target surface emits secondary electrons at the same time, and these electrons play a key role in keeping the plasma stable. The emergence and application of sputtering technology has gone through many stages. At first, it was just a simple two-pole and three-pole discharge sputtering deposition; after more than 30 years of development, magnetron sputtering technology has developed into the preparation of super hard, wear-resistant, low-temperature An irreplaceable method for functional films such as friction coefficient, corrosion resistance, decoration, and optics and electricity.

  • Categories:news
  • Author:
  • Origin:
  • Time of issue:2020-03-05 13:40
  • Views:
Information

The basic process of glow plasma sputtering is that the target material of the negative electrode is sputtered from the target material under the action of the energetic ions in the glow plasma located on it, and then condenses on the substrate to form a thin film; During this process, the target surface emits secondary electrons at the same time, and these electrons play a key role in keeping the plasma stable. The emergence and application of sputtering technology has gone through many stages. At first, it was just a simple two-pole and three-pole discharge sputtering deposition; after more than 30 years of development, magnetron sputtering technology has developed into the preparation of super hard, wear-resistant, low-temperature An irreplaceable method for functional films such as friction coefficient, corrosion resistance, decoration, and optics and electricity. Pulsed magnetron sputtering technology is another major development in this field. The use of DC reactive sputtering to deposit dense and defect-free insulating films, especially ceramic films, is almost difficult to achieve. The reason is that the deposition rate is low and the target is prone to arc discharge, which leads to changes in structure, composition and performance. Using pulsed magnetron sputtering technology can overcome these shortcomings. The pulse frequency is intermediate frequency 10~200kHz, which can effectively prevent target arc discharge and stabilize the reactive sputtering deposition process to achieve high-speed deposition of high-quality reactive films. The author mainly discusses the progress of magnetron sputtering technology in unbalanced magnetron sputtering, pulsed magnetron sputtering, etc., and at the same time, magnetron sputtering in low-pressure sputtering, high-speed deposition, high-purity film preparation and improvement of reactive sputtering films The quality and other aspects of the process progress were analyzed in depth, and the petrochemical industry in our country should vigorously develop and apply magnetron sputtering technology.

   Unbalanced magnetron sputtering technology

        Compared with conventional magnetron sputtering, unbalanced magnetron sputtering technology has very little difference in design, but it leads to huge differences in deposition characteristics. Figure 1 shows the plasma of unbalanced magnetron sputtering and conventional magnetron sputtering technology. Schematic diagram of body area characteristics.

 

       In conventional magnetron sputtering, the plasma is completely confined to the target area, and the typical value is about 6cm from the target surface. In the unbalanced magnetron sputtering of Figure 1c (called diffusivity), the peripheral magnetic field strength is higher than the central magnetic field strength, the magnetic field lines do not form a closed loop between the center and the periphery, and part of the peripheral magnetic field lines extend to the surface of the substrate, making Part of the secondary electrons can reach the surface of the substrate along the lines of magnetic force, and the plasma is no longer limited to the target area, but can reach the surface of the substrate, which increases the ion beam density of the substrate, which can usually reach more than 5mA/cm2. In this way, the sputtering source is also the ion source that bombards the substrate. The substrate ion beam current density is proportional to the target current density. The target current density increases, the deposition rate increases, and the substrate ion beam current density increases, so that the characteristics of the film constant. Figure 1b (called cohesion) is another non-equilibrium magnetic field, which is characterized by the central magnetic field strength is higher than the periphery, the magnetic field lines are not closed but are directed to the wall, and the plasma density on the substrate surface is low. Because the substrate ion beam density is low, this method is rarely used, but studies have shown that this method can obtain a high specific surface, high activity film, and the porosity of the obtained film can reach more than 1000 times that of the dense surface. Degree can be controlled. Porous films have important applications as catalysts, ignition devices, and heat-absorbing black bodies.

       The further development of unbalanced magnetron sputtering technology is unbalanced closed magnetic field magnetron sputtering (CFUBMS), which is characterized by the use of multiple unbalanced magnetron sputtering sources installed in a certain way to overcome the use of a single target in complex substrates. The huge difficulties faced by uniform deposition of thin films on the bottom surface. In a multi-target system, the relationship between two adjacent targets can be placed in parallel or opposite. There are also two kinds of magnetic fields in adjacent targets. As shown in Figure 2, when the adjacent magnetic poles are opposite, it is called closed magnetic field; when the adjacent magnetic poles are the same, it is called mirror magnetic field. In the closed magnetic field method, the magnetic field lines are closed between different targets, and there are fewer electrons lost by the wall. The plasma density on the substrate surface is high. The ratio of ions to atoms reaching the substrate surface is a mirror magnetic field method or a single target is not balanced. The magnetic field is more than 2 to 3 times. When the distance between the substrate and the target increases, the closed magnetic field has a more significant effect on the ion to atom ratio on the substrate surface. In the mirror method, the lines of magnetic force are directed to the wall, and the secondary electrons move along the lines of magnetic force and are consumed by the wall, which causes the plasma density on the substrate surface to decrease.

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