Beijing Deyi Tianli Technology Development Co., Ltd.

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DE4500 Magnetron Sputtering and Evaporation Thin Film Deposition System

The DE4500 magnetron sputtering and evaporation thin film deposition system includes a sputtering chamber, an electron beam and thermal evaporation chamber, and a sample chamber. It can be used to sputter or evaporate metals, semiconductors, media and low-temperature organic materials, and is used to prepare single-layer or multi-layer films. Materials are ideal platforms for materials and thin film research in universities and research institutes

Features

Samples can be transferred between magnetron sputtering chamber, evaporation chamber and LOAD LOCK chamber under vacuum

Excellent film uniformity and repeatability

Fully automatic control by computer or manual control operation (overall operation or independent work of each cavity)

Main Configuration

coating chamber	The cavity is made of 304 stainless steel and has a viewing window.
Vacuum pump	Equipped with molecular pump (or condensate pump) and mechanical pump
Vacuum valve	Pneumatically controlled high vacuum and isolation board valves Cavity inflation valve, Roughing and pre-angle valve, gas stop valve
sputtering source	Up to 6 2 to 4 inch circular magnetron sputtering sources Pneumatic baffle for each source Power supply can be equipped with DC, pulsed DC or RF power supply
evaporation source	A Rotating Guide Multi-Crucible Electron Beam Evaporation Source High voltage power supply programmable beam spot scanner Optional thermal evaporation source
Sample table	Sample table can rotate Can be heated to 900 ℃ Maximum 8 inch substrate
Vacuum measurement	Wide range vacuum gauge for measuring vacuum and Pirani rough gauge
Pressure control	multiple flow meter One Pressure Gauge for Sputtering Pressure Control
Film thickness monitoring	Standard crystal oscillator film thickness controller
Pre-vacuum sample chamber	Ultimate vacuum better than 5E-7torr Single or multiple substrate loading capability Automatic sample transfer between three chambers oxygenation reaction RF plasma cleaning of substrates Substrate heated to 600°C

Main technical indicators

ultimate vacuum degree of coating chamber	Better than 5E-8Torr
film thickness uniformity	Film thickness uniformity better than +/-3% on 8-inch substrates
Evaporation rate resolution	0.01 A/s
Film thickness resolution	0.1A