Label Navigation
Product Content
DE500DL nano-film magnetron sputtering system
The DE500DL nano-film magnetron sputtering system is equipped with multiple magnetron sputtering sources, which can deposit metal, semiconductor and dielectric materials. It can be used for sputtering multilayer films, co-sputtering alloy films, reactive sputtering, etc. It is an ideal platform for materials and thin film deposition research and development and pilot testing.
隐藏域元素占位
DE500DL superconducting quantum magnetron sputtering system
The DE500DL superconducting quantum magnetron sputtering system is equipped with multiple magnetron sputtering sources, which can deposit metal, semiconductor and dielectric materials. It can be used for sputtering multilayer films, co-sputtering alloy films, reactive sputtering, LIFT-OFF process films, tunnel junction films, etc. It is an ideal platform for materials and thin film deposition research and development and pilot testing.
隐藏域元素占位
DE600DL nano-film magnetron sputtering system
DE600DL nano-film magnetron sputtering system is equipped with multiple magnetron sputtering sources, which can deposit metal, semiconductor and dielectric materials. It can be used for sputtering multilayer films, co-sputtering alloy films, reactive sputtering, optional wedge films, etc. It is an ideal platform for materials and thin film deposition research and development and pilot testing.
隐藏域元素占位
Multiple Sputtering Sources Can sputter metal, semiconductor, dielectric materials and magnetic materials Sputtered monolayer, multilayer or co-sputtered alloy films or reactive sputtering Stainless steel cavity, rubber ring sealed front door, easy to operate and maintain PID downstream or upstream pressure control Optional Ion Source Assisted Deposition Optional RF plasma cleaning or ion source cleaning The whole system realizes automatic control through industrial computer and PLC For pilot and mass production
隐藏域元素占位
DE5000 Multi-Cavity Magnetron Sputtering System
EFEM can be equipped with FAB 100-level purification room and unmanned workshop. After the wafer runs empty, the number of particles with wafer surface size> 0.2um <15 The number of particles with size> 0.2um on the new film is less than 30.
隐藏域元素占位
News content
undefined